EFEK VARIASI PERSENTASE ATOM PEN-DOPING GALIUM-BORON TERHADAP MORFOLOGI NANOROD ZnO

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dc.contributor.authorSaddiah
dc.contributor.authorIwantono
dc.contributor.authorUmar, Akrajas Ali
dc.date.accessioned2016-02-01T04:20:47Z
dc.date.available2016-02-01T04:20:47Z
dc.date.issued2016-02-01
dc.description.abstractZnO nanorods growth has been performed by using hydrothermal method at a temperature of 90°C for 8 hours on the surface of Fluorine Tin Oxide (FTO). The effect of Gallium (Ga) atom varied by 1%; 1.5%; 2%; 3% with boron (B) atom 1% on the growth of ZnO nanorods was investigated. The samples were characterized by using Field Emission Scanning Microscope (FESEM) to analyze the morphology of the Ga-B growth doped ZnO nanorods. FESEM images showed that the Ga-B doped ZnO nanorod grown on the surface of the FTO has hexagonal face shape and diameter varied in the range 87-400 nm. The addition of Ga atoms resulted ZnO nanorods diameter size became uniform. The cross sectional FESEM of the sampel showed that the increasing of Ga atom, then ZnO nanorods were formed shorter and coresponding to have skew.en_US
dc.description.sponsorshipFakultas Matematika dan Ilmu Pengetahuan Alam Universitas Riauen_US
dc.identifier.otherwahyu sari yeni
dc.identifier.urihttp://repository.unri.ac.id/xmlui/handle/123456789/7872
dc.language.isoenen_US
dc.subjectZnO nanoroden_US
dc.subjectco-dopingen_US
dc.subjectFESEMen_US
dc.subjecthydrothermalen_US
dc.titleEFEK VARIASI PERSENTASE ATOM PEN-DOPING GALIUM-BORON TERHADAP MORFOLOGI NANOROD ZnOen_US
dc.typestudent Paper Post Degreeen_US

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