Abstract:
Ferroelectric is an electronic material, the dielectric in particular, which can be applied as a capacitor.
Ferroelectric is able to change the direction of its internal electric field by the use of a suitable electric
field. Barium Titanate is a ferroelectric material which can be doped with zirconium and made in the
form of a thin film. The addition of zirconium doping to Barium Titanate will increase the dielectric
constant of the material. The making of Barium Zirconiun Titanate thin film with the composition
(BaZr0,45Ti0,55O3) has been successfully prepared using the sol-gel method. The annealing temperature
variations are 600oC and 650oC with a 1 hour holding time and characterized using XRD and SEM.
The XRD characterization results obtain lattice parameters of a = b = 3.97 and c = 4.25 Ȧ, and
thereby, the crystal structure is tetragonal. The crystallinity level is highly increasing with increased
annealing temperature, indicated by increased intensity. SEM characterization shows that at annealing
temperature of 600oC, the grain size is not clearly visible, so the grain size cannot be determined. At a
temperature of 650oC, the grain size can be determined with the average grain size of about 134.5 nm
