Iriyanto, Heri2021-07-282021-07-282020-08wahyu sari yenihttps://repository.unri.ac.id/handle/123456789/10041thin layer of BZT has been successfully made into a thin films using the sol-gel method with annealing temperature variations. The BaZr0,15Ti0,85O3 thin films was annealed for 1 hour and was held at a temperature of 600oC and 650oC. Characterization of thin films was carried out using ultraviolet-visible spectroscopy and X-ray diffraction (XRD). The optical energy band gap width of the BaZr0,15Ti0,85O3 thin film at a temperature of 600ºC and 650ºC is 3.62 eV and 3.13 eV. The energy band gap values of all the thin films are obtained in the range of 3.17-3.61 eV, these values indicated the semiconductor materials.The X-ray diffraction on the analysis results of the BaZr0,15Ti0,85O3 sample 600ºC and 650ºC, it was found that annealing temperature variations affected the crystal size. Data of lattice parameters have value of a = b is 4.03 Å and for c is 4.08 Å. These results showed that the structure of BZT crystal is tetragonal because the lattice parameter has value of a=b c.enBZT thin filmssol-gel methodoptical characterizationenergy band gapCrystal StructureArticle