Abstract:
To manufacture a ceramic dielectric made from CSZ 99.5% and 0.5% B2O3 with solid-state reaction has been investivigated. Characterization has been carried out after sintering with temperature of 900 oC, 1000 oC and 1100 oC for 2 hours respectively. The XRD analysis showed that only a cubic phase in 900 oC but with cubic phase and monoclinic phase sintered obtained at temperature 1000 oC and 1100 oC significantly. The monoclinic phase rises at temperature of 1000 to 1100 oC. The data showed that microstructure porosity and grain size were larger with increasing temperature of sintering. The dielectric constant increases with rising temperature sinter. The significant increase in the value of the constant temperature of sintering occurs from 900 to 1000 oC. This concludes that sintering temperature influences the characteristics of ceramic dielectrics.
